Diamond wire
This product is made by using a special process to uniformly solidify diamond micro-powder particles at a certain distribution density onto a high-strength steel wire and tungsten wire matrix. Through a diamond wire cutting machine, the diamond wire and the object undergo high-speed grinding motion, thereby achieving cutting.
Specifications below 100µm are mainly used for crystalline silicon wafer slicing.
Specifications of 100µm and above are mainly used for cutting materials such as crystalline silicon, squaring, sapphire, magnetic materials, stone, and cemented carbide.
High-strength steel wire, made from high-carbon steel, serves as the base material for diamond cutting wire.
| Specification | Finished Diameter
(μm) |
Diameter before drawing (μm) | Minimum breaking force (N) | Application |
| 10
Tungsten wire |
26±3 | 21.5±0.5 | 2.7 | For silicon wafer slicing |
| 12
Tungsten wire |
28±3 | 22.5±0.5 | 2.9 | |
| 13
Tungsten wire |
29±3 | 23.5±0.5 | 3.1 | |
| 14
Tungsten wire |
30±3 | 24.5±0.5 | 3.3 | |
| 15
Tungsten wire |
31±3 | 25.5±0.5 | 3.5 | |
| 16
Tungsten wire |
32±3 | 26.5±0.5 | 3.7 | |
| 17
Tungsten wire |
33±3 | 27.5±0.5 | 3.9 | |
| 18
Tungsten wire |
34±3 | 28.5±0.5 | 4.0 | |
| 20
Tungsten wire |
36±3 | 29.5±0.5 | 4.4 | |
| 22
Tungsten wire |
38±3 | 30.5±0.5 | 4.6 | |
| 38 | 53±3 | 43.5±0.5 | 7.5 | |
| 70 | 81±3 | 69±2 | 16.9 | Semiconductor slicing |
| 100 | 113±3 | 100±2 | 31 | |
| 110 | 160±3 | 110±2 | 36 | Magnetic material cutting |
| 120 | 170±3 | 120±2 | 42 | |
| 130 | 190±3 | 130±2 | 47 | |
| 160 | 230±3 | 160±2 | 73 | Gemstone cutting |
| 180 | 250±3 | 180±2 | 88 | |
| 260 | 360±3 | 260±3 | 185 | Squaring of crystalline silicon |
| 300 | 420±3 | 300±3 | 220 |